The 2DNEURO project in the field of information technology and high-performance computing focused on the fabrication of memristors (memory-resistance devices). The main objective was to build electronic synapses capable of stable and volatile resistive switching, simulate long-term and short-term plasticity, and implement time-dependent learning rules.
At the conclusion of the project, the BRICS research team successfully designed, fabricated, tested, and modeled advanced memristors based on various materials, including two-dimensional materials with enhanced physical, chemical, mechanical, and electronic properties. These achievements contribute to reducing the hardware complexity of neuromorphic computers and advancing next-generation computing technologies.
| Call Number | Second BRICS STI Framework Programme Call, 2017 | |
| Project Code and Acronym | BRICS2017-211 “2DNEURO” | |
| Country | Research Institutions | Principal Investigators |
|---|---|---|
🇧🇷 Brazil |
Federal University of Rio Grande do Sul | Gilson Inacio Wirth |
🇷🇺 Russia |
Rzhanov Institute of Semiconductor Physics – RAS | Vladimir Gritsenko |
🇮🇳 India |
Indian Institute of Science Bangalore | Santanu Mahapatra |
🇨🇳 China |
Soochow University | Mario Lanza |
| Funding Agencies | National Council for Scientific and Technological Development of Brazil (CNPq), Russian Center for Scientific Information (RCSI), Department of Science and Technology of India (DST), Ministry of Science and Technology of China (MOST) | |
